- 4E, No.3 Shenfeng Road, Liuyao Community, Henggang Street, Longgang District, Shenzhen,China
- cc.shen@xypltd.com
- Call: +86 15112667855
Integrated Circuits (ICs)
IRS2181STRPBF Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
Description
The IRS2181/IRS21814 are high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Features
• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage, dV/dtimmune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout for both channels
• 3.3 V and 5 V input logic compatible
• Matched propagation delay for both channels
• Logic and power ground +/- 5 V offset
• Lower di/dt gate driver for better noise immunity
• Output source/sink current capability 1.4 A/1.8 A
• RoHS compliant
Specification of IRS2181STRPBF
|
Category |
Integrated Circuits (ICs) Power Management (PMIC) Gate Drivers |
|
Mfr |
International Rectifier |
|
Series |
- |
|
Product Status |
Active |
|
Driven Configuration |
Half-Bridge |
|
Channel Type |
Independent |
|
Number of Drivers |
2 |
|
Gate Type |
IGBT, N-Channel MOSFET |
|
Voltage - Supply |
10V ~ 20V |
|
Logic Voltage - VIL, VIH |
0.8V, 2.5V |
|
Current - Peak Output (Source, Sink) |
1.9A, 2.3A |
|
Input Type |
Non-Inverting |
|
High Side Voltage - Max (Bootstrap) |
600 V |
|
Rise / Fall Time (Typ) |
40ns, 20ns |
|
Operating Temperature |
-40°C ~ 150°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
|
Supplier Device Package |
8-SOIC |
