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Connector
MMUN2233LT1G Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Data of MMUN2233LT1G
|
Category |
Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors |
|
Mfr |
onsemi |
|
Product Status |
Active |
|
Transistor Type |
NPN - Pre-Biased |
|
Current - Collector (Ic) (Max) |
100 mA |
|
Voltage - Collector Emitter Breakdown (Max) |
50 V |
|
Resistor - Base (R1) |
4.7 kOhms |
|
Resistor - Emitter Base (R2) |
47 kOhms |
|
DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 5mA, 10V |
|
Vce Saturation (Max) @ Ib, Ic |
250mV @ 300µA, 10mA |
|
Current - Collector Cutoff (Max) |
500nA |
|
Power - Max |
246 mW |
|
Mounting Type |
Surface Mount |
|
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
